2
RF Device Data
Freescale Semiconductor
MRF7S38010HR3 MRF7S38010HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 65 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 33.5
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
= 30 Vdc, I
D
= 160 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 335 mAdc)
VDS(on)
0.1
0.21
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
0.13
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
68.5
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
50.6
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, P
out
= 2 W Avg., f = 3400 MHz and f = 3600 MHz,
3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in
WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
Gps
13
15
17
dB
Drain Efficiency
ηD
15
17
30
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
8
8.5
?
dB
Adjacent Channel Power Ratio
ACPR
?
-49
-46
dBc
Input Return Loss
IRL
?
-12
-6
dB
1. Part internally matched both on input and output.
(continued)
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